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NSS1C201MZ4T1G - Brand New onsemi Transistors (BJT) - Single - Datasheet - Chipdatas

NSS1C201MZ4T1G - Brand New onsemi Transistors (BJT) - Single

In Stock:6888 ,Ready for Immediate Shipping
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In Stock: 6888, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD93-NSS1C201MZ4T1G
Manufacturer Part No.:NSS1C201MZ4T1G
Datecode:09+
Package:TO-261-4, TO-261AA
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  • Description

    Electronic Component Model:NSS1C201MZ4T1G is a Low VCE(sat) NPN Transistor with a maximum voltage of 100 V and maximum current of 2.0 A. It is a miniature surface mount device featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These features make it ideal for use in low voltage, high speed switching applications where affordable efficient energy control is important.

    Specifications and features

    • Product Category: Transistors (BJT) - Single
    • Maximum Voltage: 100 V
    • Maximum Current: 2.0 A
    • Low VCE(sat) NPN Transistor
    • High current gain capability
    • Designed for use in low voltage, high speed switching applications
    • Pb−Free Devices

    Application Scenarios

    NSS1C201MZ4T1G is typically used in DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

    Comparison

    Advantages:
    • Ultra low saturation voltage (VCE(sat))
    • High current gain capability
    • Ideal for use in low voltage, high speed switching applications
    • Pb−Free Devices
    Disadvantages:

    No disadvantages found.

  • Similar parts: 7128 , Click to view
    Attributes Value
    Category Transistors (BJT) - Single
    Manufacturer onsemi
    Product Category Transistors (BJT) - Single
    Series -
    Packaging Alternate Packaging
    Package-Case TO-261-4, TO-261AA
    Mounting-Type Surface Mount
    Supplier-Device-Package SOT-223
    Power-Max 800mW
    Transistor-Type NPN
    Electric current collectors 2A
    Voltage-Collector-Emitter-Breakdown-Max 100V
    DC-Current-Gain-hFE-Min-Ic-Vce 120 @ 500mA, 2V
    Vce saturation 180mV @ 200mA, 2A
    Current-Collector-Cutoff-Max 100nA (ICBO)
    Frequency-Transition 100MHz
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download NSS1C201MZ4T1G
  • Chipdatas Part: CD93-NSS1C201MZ4T1G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 17:01 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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