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MMBT4401LT1G - Brand New ON Semiconductor Transistors (BJT) - Single - Datasheet - Chipdatas

MMBT4401LT1G - Brand New ON Semiconductor Transistors (BJT) - Single

In Stock:200000 ,Ready for Immediate Shipping
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In Stock: 200000, Ready for Immediate Shipping
Chipdatas Part No.:CD92-MMBT4401LT1G
Manufacturer Part No.:MMBT4401LT1G
Datecode:09+
Package:SOT-23
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  • Description

    The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.

    Specifications and features

    Product Category: Transistors (BJT) - Single
    Halogen-free/BFR-free
    AEC-Q101 qualified and PPAP capable
    60VDC Collector to base voltage (VCBO)
    6VDC Emitter to base voltage (VEBO)
    900mADC Peak collector current
    556°C/W Thermal resistance, junction to ambient

    Application Scenarios

    Industrial
    Power Management

    Comparison

    Advantages

    - Suitable for lower power surface mount applications

    - Halogen-free/BFR-free

    - AEC-Q101 qualified and PPAP capable

    - Suitable for use in linear and switching applications

    Disadvantages

    - May not be suitable for high power applications.

  • Similar parts: 7128 , Click to view
    Attributes Value
    Category Transistors (BJT) - Single
    Manufacturer ON Semiconductor
    Product Category Transistors (BJT) - Single
    Series MMBT4401L
    Packaging Alternate Packaging
    Unit-Weight 0.050717 oz
    Mounting-Style SMD/SMT
    Package-Case TO-236-3, SC-59, SOT-23-3
    Mounting-Type Surface Mount
    Supplier-Device-Package SOT-23-3 (TO-236)
    Configuration Single
    Power-Max 300mW
    Transistor-Type NPN
    Electric current collectors 600mA
    Voltage-Collector-Emitter-Breakdown-Max 40V
    DC-Current-Gain-hFE-Min-Ic-Vce 100 @ 150mA, 1V
    Vce saturation 750mV @ 50mA, 500mA
    Current-Collector-Cutoff-Max -
    Frequency-Transition 250MHz
    Pd-Power-Dissipation 225 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Collector-Emitter-Voltage-VCEO-Max 40 V
    Transistor-Polarity NPN
    Collector-Emitter-Saturation-Voltage 0.75 V
    Collector-Base-Voltage-VCBO 60 V
    Emitter-Base-Voltage-VEBO 6 V
    Maximum-DC-Collector-Current 0.6 A
    Gain-Bandwidth-Product-fT 250 MHz
    Continuous-Collector-Current 0.6 A
    DC-Collector-Base-Gain-hfe-Min 20
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download MMBT4401LT1G
  • Chipdatas Part: CD92-MMBT4401LT1G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/24 21:30 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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