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MMBT6427LT1G - Brand New ON Semiconductor Transistors (BJT) - Single - Datasheet - Chipdatas

MMBT6427LT1G - Brand New ON Semiconductor Transistors (BJT) - Single

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Chipdatas Part No.:CD92-MMBT6427LT1G
Manufacturer Part No.:MMBT6427LT1G
Datecode:09+
Package:SOT-23
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  • Description

    The MMBT6427LT1G is a Darlington Transistor in NPN Silicon for use in various electronic circuits. It falls under the category of Transistors (BJT) - Single, and it is available in Pb-free package.

    Specifications and features

    Product Category: Transistors (BJT) - Single

    Type: Darlington Transistor, NPN Silicon

    Package: Available in Pb-free Package

    Application Scenarios

    The MMBT6427LT1G can be used in various electronic circuits, including but not limited to audio amplifiers, power switching circuits, and voltage regulators.

    Comparison

    Advantages
    • The Darlington Configuration of this transistor allows for high current gain.
    • The NPN Silicon material used in this transistor provides better signal amplification than PNP Silicon.
    • The availability of Pb-free package makes this transistor environmentally friendly.
    Disadvantages
    • The Darlington Configuration of this transistor may cause a voltage drop which can affect circuit performance.
  • Similar parts: 7128 , Click to view
    Attributes Value
    Category Transistors (BJT) - Single
    Manufacturer ON Semiconductor
    Product Category Transistors (BJT) - Single
    Series MMBT6427L
    Packaging Alternate Packaging
    Unit-Weight 0.050717 oz
    Mounting-Style SMD/SMT
    Package-Case TO-236-3, SC-59, SOT-23-3
    Mounting-Type Surface Mount
    Supplier-Device-Package SOT-23-3 (TO-236)
    Configuration Single
    Power-Max 225mW
    Transistor-Type NPN - Darlington
    Electric current collectors 500mA
    Voltage-Collector-Emitter-Breakdown-Max 40V
    DC-Current-Gain-hFE-Min-Ic-Vce 20000 @ 100mA, 5V
    Vce saturation 1.5V @ 500μA, 500mA
    Current-Collector-Cutoff-Max 1μA
    Frequency-Transition -
    Pd-Power-Dissipation 225 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Collector-Emitter-Voltage-VCEO-Max 40 V
    Transistor-Polarity NPN
    Collector-Base-Voltage-VCBO 40 V
    Emitter-Base-Voltage-VEBO 12 V
    Maximum-DC-Collector-Current 0.5 A
    Continuous-Collector-Current 0.5 A
    DC-Collector-Base-Gain-hfe-Min 10000
    Maximum-Collector-Cut-off-Current 0.05 uA
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  • Shopping guide

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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download MMBT6427LT1G
  • Chipdatas Part: CD92-MMBT6427LT1G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 21:00 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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