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KSP13BU - Brand New onsemi Transistors (BJT) - Single - Datasheet - Chipdatas

KSP13BU - Brand New onsemi Transistors (BJT) - Single

In Stock:493079 ,Ready for Immediate Shipping
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In Stock: 493079, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD91-KSP13BU
Manufacturer Part No.:KSP13BU
Datecode:09+
Package:TO-226-3, TO-92-3 TO-226AA
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  • Description

    This is the KSP13BU electronic component model, which falls under the category of transistors (BJT) - single. It is a Darlington transistor that has a Collector-Emitter Voltage of VCES = 30V and a Collector Power Dissipation of PC (max) = 625mW.

    Specifications and features

    • Product Category: Transistors (BJT) - Single
    • Model: KSP13BU
    • Type: NPN
    • Configuration: Single
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1mA, 5V
    • Collector-Emitter Voltage (Vceo): 30V
    • Collector-Base Voltage (Vcb): 40V
    • Emitter-Base Voltage (Vebo): 5V
    • Collector Current (Ic) (Max) @ Vce: 1A @ 1V
    • Transition Frequency (ft): 30MHz
    • Power Dissipation (Max): 625mW

    Application Scenarios

    The KSP13BU transistor is commonly used in various electronic circuits and applications, including audio amplifiers, power switching, and LED driver circuits.

    Comparison

    Advantages
    • The Darlington configuration provides high current gain.
    • This transistor has a low Collector-Emitter Saturation Voltage, which helps to reduce power loss.
    • The KSP13BU transistor has a high transition frequency, making it suitable for audio amplification applications.
    Disadvantages
    • Compared to other types of transistors, Darlington transistors have a greater voltage drop across them.
    • This transistor is not suitable for high-frequency applications.
  • Similar parts: 7128 , Click to view
    Attributes Value
    Category Transistors (BJT) - Single
    Manufacturer onsemi
    Product Category Transistors (BJT) - Single
    Series -
    Packaging Bulk
    Part-Aliases KSP13BU_NL
    Unit-Weight 0.006314 oz
    Mounting-Style Through Hole
    Package-Case TO-226-3, TO-92-3 (TO-226AA)
    Mounting-Type Through Hole
    Supplier-Device-Package TO-92-3
    Configuration Single
    Power-Max 625mW
    Transistor-Type NPN - Darlington
    Electric current collectors 500mA
    Voltage-Collector-Emitter-Breakdown-Max 30V
    DC-Current-Gain-hFE-Min-Ic-Vce 10000 @ 100mA, 5V
    Vce saturation 1.5V @ 100μA, 100mA
    Current-Collector-Cutoff-Max 100nA (ICBO)
    Frequency-Transition 125MHz
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Collector-Emitter-Voltage-VCEO-Max 30 V
    Transistor-Polarity NPN
    Collector-Base-Voltage-VCBO 30 V
    Emitter-Base-Voltage-VEBO 10 V
    Maximum-DC-Collector-Current 0.5 A
    DC-Collector-Base-Gain-hfe-Min 5000
    Maximum-Collector-Cut-off-Current 0.1 uA
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  • Shopping guide

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Contact us
Additional Information
  • Datasheet: Download KSP13BU
  • Chipdatas Part: CD91-KSP13BU
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/24 21:18 +0800
Refund
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