Description

These N-Channel enhancement mode silicon gate power field effect transistors, model RFP12N10L, are specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. With a special gate oxide design, they provide full rated conduction at gate biases in the 3V to 5V range, enabling true on-off power control directly from logic circuit supply voltages.

Specifications and features

• 12A, 100V
• rDS(ON)= 0.200Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards

Application Scenarios

The RFP12N10L transistors can be used in various scenarios, including but not limited to:

- Programmable controllers

- Automotive switching

- Solenoid drivers

Comparison

- Specifically designed for logic level (5V) driving sources

- Enables true on-off power control directly from logic circuit supply voltages

- Compatible with automotive drive requirements

- High input impedance

- Nanosecond switching speeds

- None identified