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SI7308DN-T1-GE3 - Brand New ROHM Field Effect Tube (MOSFET) - Datasheet - Chipdatas

SI7308DN-T1-GE3 - Brand New ROHM Field Effect Tube (MOSFET)

In Stock:21071 ,Ready for Immediate Shipping
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In Stock: 21071, Ready for Immediate Shipping
Brand:ROHM
Chipdatas Part No.:CD93-SI7308DN-T1-GE3
Manufacturer Part No.:SI7308DN-T1-GE3
Datecode:09+
Package:PowerPAK® 1212-8
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  • Description

    The SI7308DN-T1-GE3 is a high-performance MOSFET transistor that belongs to the SI7308DN series produced by Vishay. It is designed with an advanced process technology and features low ON-resistance, fast switching speed, low gate charge, and low threshold voltage. It is suitable for high-speed switching applications with a high power-density requirement. This MOSFET transistor is packaged in a compact and environment-friendly 100% lead-free SOT-23-3 package.

    Specifications and features

    • Manufacturer: Vishay
    • Product Category: Field Effect Tube (MOSFET)
    • Number of Channels: 1 Channel
    • Vds: 30 V
    • Id - Continuous Drain Current: 4.5 A
    • Rds On (Max) @ Id, Vgs: 28 mOhm @ 3.6A, 10V
    • Vgs(th) (Max) @ Id: 1.8V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
    • Power - Max: 1.35W
    • Package / Case: SOT-23-3

    Application Scenarios

    The SI7308DN-T1-GE3 MOSFET transistor is commonly used in a variety of electronics devices and systems where a high-speed switching application with low power dissipation is required. It can be used in portable devices, such as smartphones, tablets, and laptops, as well as in motor control systems, LED lighting, power management, and other applications that require high efficiency and performance.

    Comparison

    Advantages
    • Low ON-resistance
    • Fast switching speed
    • Low gate charge
    • Compact and environment-friendly package
    Disadvantages
    • Maximum Vds is only 30V, which limits its applications in some high voltage environments.
    • Maximum continuous drain current is 4.5A, which limits its applications in some high current environments.
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer ROHM
    Product Category FETs - Single
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SI7308DN-GE3
    Mounting-Style SMD/SMT
    Package-Case PowerPAKR 1212-8
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package PowerPAKR 1212-8
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 19.8W
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 60V
    Input Capacitance 665pF @ 15V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 6A (Tc)
    Rds-On-Max-Id-Vgs 58 mOhm @ 5.4A, 10V
    Vgs-th-Max-Id 3V @ 250μA
    Gate-Charge-Qg-Vgs 20nC @ 10V
    Pd-Power-Dissipation 3.2 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 10 ns
    Rise-Time 65 ns 15 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 5.4 A
    Vds-Drain-Source-Breakdown-Voltage 60 V
    Rds-On-Drain-Source-Resistance 58 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 15 ns 20 ns
    Turn-On Delay Time 15 ns 10 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download SI7308DN-T1-GE3
  • Chipdatas Part: CD93-SI7308DN-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/05 06:18 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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