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FQD2N100TM
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Product Details
Manufacturer
Fairchild Semiconductor
Product Category
FETs - Single
Series
QFET®
Packaging
Alternate Packaging
Part-Aliases
FQD2N100TM_NL
Unit-Weight
0.009184 oz
Mounting-Style
SMD/SMT
Package-Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
D-Pak
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
2.5W
Transistor-Type
1 N-Channel
VDSS – Drain-Source Voltage
1000V (1kV)
Input Capacitance
520pF @ 25V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
1.6A (Tc)
Rds-On-Max-Id-Vgs
9 Ohm @ 800mA, 10V
Vgs-th-Max-Id
5V @ 250μA
Gate-Charge-Qg-Vgs
15.5nC @ 10V
Pd-Power-Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Fall-Time
35 ns
Rise-Time
30 ns
Vgs-Gate-Source-Voltage
30 V
ID (drain current)
1.6 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Rds-On-Drain-Source-Resistance
7.1 Ohms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
25 ns
Turn-On Delay Time
13 ns
Transconductance
1.9 S
Channel-Mode
Enhancement
FQD2N100TM - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)
Manufacturer Part No.:FQD2N100TM
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Estimated between Mon, Mar 17 and Wed, Mar 19.This item requires 2-5 business days for processing before shipping after payment is confirmed. And depending on the destination and shipping method.See details
Return:60 days returns. Buyer pays for return shipping.See details
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