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Product Details
Manufacturer
Diodes Incorporated
Product Category
FETs - Single
Series
2N7002
Packaging
Alternate Packaging
Unit-Weight
0.000282 oz
Mounting-Style
SMD/SMT
Package-Case
TO-236-3, SC-59, SOT-23-3
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
SOT-23-3
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
370mW
Transistor-Type
1 N-Channel
VDSS – Drain-Source Voltage
60V
Input Capacitance
50pF @ 25V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
380mA (Ta)
Rds-On-Max-Id-Vgs
2 Ohm @ 500mA, 10V
Vgs-th-Max-Id
2.5V @ 1mA
Gate-Charge-Qg-Vgs
0.3nC @ 4.5V
Pd-Power-Dissipation
540 mW
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Fall-Time
9.9 ns
Rise-Time
3.4 ns
Vgs-Gate-Source-Voltage
20 V
ID (drain current)
380 mA
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Resistance
3 Ohms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
15.7 ns
Turn-On Delay Time
3.9 ns
Qg-Gate-Charge
0.3 nC
Channel-Mode
Enhancement
2N7002K-7 - Brand New Diodes Incorporated Field Effect Tube (MOSFET)
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