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Product Details
Manufacturer
ROHM
Product Category
FETs - Single
Series
TrenchFET®
Packaging
Alternate Packaging
Part-Aliases
SI7308DN-GE3
Mounting-Style
SMD/SMT
Package-Case
PowerPAKR 1212-8
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
PowerPAKR 1212-8
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
19.8W
Transistor-Type
1 N-Channel
VDSS – Drain-Source Voltage
60V
Input Capacitance
665pF @ 15V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
6A (Tc)
Rds-On-Max-Id-Vgs
58 mOhm @ 5.4A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Charge-Qg-Vgs
20nC @ 10V
Pd-Power-Dissipation
3.2 W
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Fall-Time
10 ns
Rise-Time
65 ns 15 ns
Vgs-Gate-Source-Voltage
20 V
ID (drain current)
5.4 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistance
58 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
15 ns 20 ns
Turn-On Delay Time
15 ns 10 ns
Channel-Mode
Enhancement
SI7308DN-T1-GE3 - Brand New ROHM Field Effect Tube (MOSFET)
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Delivery:
Estimated between Mon, Mar 17 and Wed, Mar 19.This item requires 2-5 business days for processing before shipping after payment is confirmed. And depending on the destination and shipping method.See details
Return:60 days returns. Buyer pays for return shipping.See details
Payments:
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One-month free return and one year warranty.
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