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Product Details
Manufacturer
ROHM
Product Category
FETs - Single
Series
TrenchFET®
Packaging
Alternate Packaging
Part-Aliases
2N7002K-GE3
Unit-Weight
0.050717 oz
Mounting-Style
SMD/SMT
Package-Case
TO-236-3, SC-59, SOT-23-3
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
TO-236
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
350mW
Transistor-Type
1 N-Channel
VDSS – Drain-Source Voltage
60V
Input Capacitance
30pF @ 25V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
300mA (Ta)
Rds-On-Max-Id-Vgs
2 Ohm @ 500mA, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Charge-Qg-Vgs
0.6nC @ 4.5V
Pd-Power-Dissipation
350 mW
Maximum Operating Temperature
+ 125 C
Operating temperature range
- 55 C
Vgs-Gate-Source-Voltage
20 V
ID (drain current)
300 mA
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistance
2 Ohms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
35 ns
Turn-On Delay Time
25 ns
Qg-Gate-Charge
0.4 nC
Transconductance
100 mS
Channel-Mode
Enhancement
2N7002K-T1-GE3 - Brand New ROHM Field Effect Tube (MOSFET)
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Delivery:
Estimated between Mon, Mar 17 and Wed, Mar 19.This item requires 2-5 business days for processing before shipping after payment is confirmed. And depending on the destination and shipping method.See details
Return:60 days returns. Buyer pays for return shipping.See details
Payments:
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One-month free return and one year warranty.
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