RFP12N10L - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)
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Description
These N-Channel enhancement mode silicon gate power field effect transistors, model RFP12N10L, are specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. With a special gate oxide design, they provide full rated conduction at gate biases in the 3V to 5V range, enabling true on-off power control directly from logic circuit supply voltages.
Specifications and features
• 12A, 100V
• rDS(ON)= 0.200Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC BoardsApplication Scenarios
The RFP12N10L transistors can be used in various scenarios, including but not limited to:
- Programmable controllers
- Automotive switching
- Solenoid drivers
Comparison
Advantages- Specifically designed for logic level (5V) driving sources
- Enables true on-off power control directly from logic circuit supply voltages
- Compatible with automotive drive requirements
- High input impedance
- Nanosecond switching speeds
Disadvantages- None identified
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Similar parts: 25937 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Popular parts of the same kind
- Datasheet: Download RFP12N10L
- Chipdatas Part: CD87-RFP12N10L
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 16:24 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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