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2N7002E-T1-E3 - Brand New ROHM Field Effect Tube (MOSFET) - Datasheet - Chipdatas

2N7002E-T1-E3 - Brand New ROHM Field Effect Tube (MOSFET)

In Stock:2517 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 2517, Ready for Immediate Shipping
Brand:ROHM
Chipdatas Part No.:CD93-2N7002E-T1-E3
Manufacturer Part No.:2N7002E-T1-E3
Datecode:09+
Package:TO-236-3, SC-59, SOT-23-3
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  • Description

    This is Electronic Component Model 2N7002E-T1-E3, a Field Effect Tube (MOSFET). It is compliant to RoHS Directive 2002/95/EC and halogen-free according to IEC 61249-2-21 definition. It features low on-resistance, low threshold, low input capacitance, fast switching speed, and low input and output leakage. It can easily be driven without buffer and ideal for high-speed circuits. It is suitable for direct logic-level interface such as TTL/CMOS, drivers like relays, solenoids, lamps, hammers, display, memories, transistors, battery-operated systems, and solid-state relays.

    Specifications and features

    • Halogen-free According to IEC 61249-2-21 Definition
    • Low On-Resistance: 3 Ω
    • Low Threshold: 2 V (typ.)
    • Low Input Capacitance: 25 pF
    • Fast Switching Speed: 7.5 ns
    • Low Input and Output Leakage

    Application Scenarios

    The 2N7002E-T1-E3 MOSFET is ideal for the following applications:

    • Direct Logic-Level Interface: TTL/CMOS
    • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors,etc.
    • Battery Operated Systems
    • Solid-State Relays

    Comparison

    Advantages
    • Low Offset Voltage
    • Low-Voltage Operation
    • Easily Driven Without Buffer
    • High-Speed Circuits
    • Low Error Voltage
    Disadvantages
    • No significant disadvantages found.
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer ROHM
    Product Category FETs - Single
    Series 2N7002
    Packaging Alternate Packaging
    Part-Aliases 2N7002E-E3
    Unit-Weight 0.050717 oz
    Mounting-Style SMD/SMT
    Package-Case TO-236-3, SC-59, SOT-23-3
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package SOT-23-3 (TO-236)
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 350mW
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 60V
    Input Capacitance 21pF @ 5V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 240mA (Ta)
    Rds-On-Max-Id-Vgs 3 Ohm @ 250mA, 10V
    Vgs-th-Max-Id 2.5V @ 250μA
    Gate-Charge-Qg-Vgs 0.6nC @ 4.5V
    Pd-Power-Dissipation 200 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 115 mA
    Vds-Drain-Source-Breakdown-Voltage 70 V
    Rds-On-Drain-Source-Resistance 7.5 Ohms
    Transistor-Polarity N-Channel
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

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Contact us
Additional Information
  • Datasheet: Download 2N7002E-T1-E3
  • Chipdatas Part: CD93-2N7002E-T1-E3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/24 04:16 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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  • 2N7002E-T1-E3 - Brand New ROHM Field Effect Tube (MOSFET)
    TO-236-3, SC-59, SOT-23-3
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