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ZXTN25100DGTA - Brand New Diodes Incorporated Transistors (BJT) - Single - Datasheet - Chipdatas
ZXTN25100DGTA
ZXTN25100DGTA thumb pictures

ZXTN25100DGTA - Brand New Diodes Incorporated Transistors (BJT) - Single

In Stock:730 ,Ready for Immediate Shipping
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In Stock: 730, Ready for Immediate Shipping
Brand:Diodes Incorporated
Category:Transistors (BJT) - Single
Chipdatas Part No.:CD93-ZXTN25100DGTA
Manufacturer Part No.:ZXTN25100DGTA
Datecode:09+
Package:SOT-223
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  • Description

    Packaged in the SOT223 outline, the ZXTN25100DGTA is a low saturation NPN transistor that offers extremely low on-state losses. It is specifically designed for use in DC-DC circuits and various driving and power management functions.

    Specifications and features

    • Product Category: Transistors (BJT) - Single
    • Package Type: SOT223
    • High power dissipation
    • High gain
    • Low saturation voltage
    • 180V forward blocking voltage
    • 6V reverse blocking voltage

    Application Scenarios

    • PSU start up circuit
    • DC - DC converters
    • Motor drive
    • Relay, lamp, and solenoid drive

    Comparison

    Advantages

    - Extremely low on-state losses
    - Ideal for use in DC-DC circuits and power management functions

    Disadvantages

    - Not suitable for high voltage applications
    - Limited reverse blocking voltage

  • Similar parts: 7128 , Click to view
    Attributes Value
    Category Transistors (BJT) - Single
    Manufacturer Diodes Incorporated
    Product Category Transistors (BJT) - Single
    Series ZXTN25100
    Packaging Alternate Packaging
    Unit-Weight 0.000282 oz
    Mounting-Style SMD/SMT
    Package-Case TO-261-4, TO-261AA
    Mounting-Type Surface Mount
    Supplier-Device-Package SOT-223
    Configuration Single
    Power-Max 3W
    Transistor-Type NPN
    Electric current collectors 3A
    Voltage-Collector-Emitter-Breakdown-Max 100V
    DC-Current-Gain-hFE-Min-Ic-Vce 300 @ 10mA, 2V
    Vce saturation 500mV @ 600mA, 3A
    Current-Collector-Cutoff-Max 50nA (ICBO)
    Frequency-Transition 175MHz
    Pd-Power-Dissipation 5300 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Collector-Emitter-Voltage-VCEO-Max 100 V
    Transistor-Polarity NPN
    Collector-Base-Voltage-VCBO 180 V
    Emitter-Base-Voltage-VEBO 7 V
    Maximum-DC-Collector-Current 3 A
    Gain-Bandwidth-Product-fT 175 MHz
    DC-Collector-Base-Gain-hfe-Min 300 at 10 mA at 2 V 120 at 0.5 A at 2 V 40 at 1 A at 2 V
    DC-Current-Gain-hFE-Max 300
  • Datasheet
    Not found or temporary maintenance
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
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Contact us
Additional Information
  • Datasheet: Download ZXTN25100DGTA
  • Chipdatas Part: CD93-ZXTN25100DGTA
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 12:24 +0800
Refund
  • View Policy
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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