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RC28F640J3C115 - Brand New Intel Memory - Datasheet - Chipdatas

RC28F640J3C115 - Brand New Intel Memory

In Stock:3737 ,Ready for Immediate Shipping
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In Stock: 3737, Ready for Immediate Shipping
Marke:Intel
Kategorie:Memory
Chipdatas Teilenummer:CD93-RC28F640J3C115
Hersteller-Teile-Nr.:RC28F640J3C115
Datumscode:09+
Paket:64-TBGA
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  • Description

    Intel StrataFlash® Memory (J3) is a high-density two-bit-per-cell storage technology that offers reliable performance and easy migration to future devices. With 2X the bits in 1X the space, this memory device brings more density in less space. It is available in various densities ranging from 32-Mbit to 256-Mbit.

    Specifications and features

    Performance: - 110/115/120/150 ns Initial Access Speed - 125 ns Initial Access Speed (256 Mbit density only) - 25 ns Asynchronous Page mode Reads - 30 ns Asynchronous Page mode Reads (256Mbit density only) - 32-Byte Write Buffer - 6.8 µs per byte effective programming time Software: - Program and Erase suspend support - Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible Security: - 128-bit Protection Register - 64-bit Unique Device Identifier - 64-bit User Programmable OTP Cells - Absolute Protection with VPEN = GND - Individual Block Locking - Block Erase/Program Lockout during Power Transitions Architecture: - Multi-Level Cell Technology: High Density at Low Cost - High-Density Symmetrical 128-Kbyte Blocks - 256 Mbit (256 Blocks) (0.18µm only) - 128 Mbit (128 Blocks) - 64 Mbit (64 Blocks) - 32 Mbit (32 Blocks) Quality and Reliability: - Operating Temperature: -40 °C to +85 °C - 100K Minimum Erase Cycles per Block - 0.18 µm ETOX™ VII Process (J3C) - 0.25 µm ETOX™ VI Process (J3A) Packaging and Voltage: - 56-Lead TSOP Package - 64-Ball Intel® Easy BGA Package - Lead-free packages available - 48-Ball Intel® VF BGA Package (32 and 64 Mbit) (x16 only) - VCC = 2.7 V to 3.6 V - VCCQ = 2.7 V to 3.6 V

    Application Scenarios

    The Intel StrataFlash® Memory (J3) is suitable for code and data storage in various electronic devices such as smartphones, tablets, and IoT devices. Its high-density and low-cost architecture make it an ideal choice for memory-intensive applications.

    Comparison

    Advantages

    - More density in less space - High-speed interface - Lowest cost-per-bit NOR device - Easy migration to future devices

    Disadvantages

    - Limited availability in certain densities - Restricted compatibility with some packaging options

  • ähnliche Teile: 9920 , Klicke zum Zeigen
    Attribute Parameterwert
    Kategorie Memory
    Manufacturer INTEL
    Product Category Memory ICs
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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    Within 30 days from date of shipment. View more

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Weitere Informationen
  • Datasheet: Download RC28F640J3C115
  • Chipdaten Teil: CD93-RC28F640J3C115
  • Lagerhaus: China, Hongkong
  • Versenden: Innerhalb von 24 Stunden
  • Kostenloser Versand: Yes
  • Bevorzugter Versand: Yes, 3-5 days
  • Letzte Aktualisierung: 2024/07/01 00:53 +0800
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