Description

The STB185N55F3 is an electronic component model in the field of Field Effect Tube (MOSFET). This model is a highly efficient power transistor that offers excellent performance and reliability. It is designed for applications in a wide range of industries, including automotive, industrial, and consumer electronics. The STB185N55F3 is a popular choice for power management and switching applications, thanks to its low on-resistance and high current capability. It provides efficient power handling while minimizing power losses, making it an ideal choice for various power management applications.

Specifications and features

- Model Name: STB185N55F3 - Product Category: Field Effect Tube (MOSFET) - Power Dissipation: 185W - Continuous Drain Current: 55A - Drain-Source Voltage: 100V - Maximum Gate Threshold Voltage: 4V - RDS(ON) (at VGS = 10V): 0.014Ω

Application Scenarios

The STB185N55F3 is widely used in various application scenarios, including: - Automotive: The high current capability and efficient power handling of the STB185N55F3 make it suitable for applications such as electric vehicle powertrains, battery management systems, and motor control. - Industrial: This model is commonly used in industrial equipment and machinery, including power supplies, motor drives, and inverters. - Consumer Electronics: The STB185N55F3 is also found in consumer electronic devices such as laptops, gaming consoles, and desktop computers to manage power and improve overall performance.

Comparison

- Low on-resistance: The STB185N55F3 offers a low on-resistance of 0.014Ω, allowing for efficient power management and minimal power losses. - High current capability: With a continuous drain current of 55A, this model can handle high power loads without issues. - Wide range of applications: The STB185N55F3 is versatile and can be used in automotive, industrial, and consumer electronic applications. - None identified.