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FQA19N60 - Brand New onsemi Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FQA19N60 - Brand New onsemi Field Effect Tube (MOSFET)

In Stock:200000 ,Ready for Immediate Shipping
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In Stock: 200000, Ready for Immediate Shipping
Marke:onsemi
Chipdatas Teilenummer:CD86-FQA19N60
Hersteller-Teile-Nr.:FQA19N60
Datumscode:09+
Paket:3P
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  • Description

    The FQA19N60 is an N-Channel enhancement mode power field-effect transistor belonging to the MOSFET product category. It is a device manufactured using Fairchild's proprietary, planar stripe, DMOS technology that is specifically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Its primarily designed to work in high-efficiency switch mode power supply systems.

    Specifications and features

    • Product Category: Field Effect Tube (MOSFET)
    • Maximum Current Rating: 18.5A
    • Maximum Voltage Rating: 600V
    • RDS(on) = 0.38 Ω @ VGS = 10 V
    • Low gate charge ( typical 70 nC)
    • Low Crss ( typical 35 pF)
    • Fast switching
    • 100% avalanche tested
    • Improved dv/dt capability

    Application Scenarios

    The FQA19N60 is suitable for a wide range of applications that require efficient power switching and management. Some of the typical application scenarios include:

    • Switch-mode power supplies
    • Electronic ballasts for fluorescent lighting
    • Electronic transformers for halogen lighting
    • Solar power inverters
    • Uninterrupted power supplies (UPS)

    Comparison

    Advantages
    • Low on-state resistance (RDS(on))
    • Low input capacitance (Ciss) for faster switching speed
    • Improved avalanche ruggedness
    • 100% avalanche tested
    Disadvantages
    • Not intended for use in applications requiring high reliability or direct automotive use.
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    Attribute Parameterwert
    Kategorie Field Effect Tube (MOSFET)
    Manufacturer onsemi
    Product Category FETs - Single
    Packaging Tube
    Part-Aliases FQA19N60_NL
    Unit-Weight 0.225789 oz
    Mounting-Style Through Hole
    Package-Case TO-3P-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 300 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 135 ns
    Rise-Time 210 ns
    Vgs-Gate-Source-Voltage 30 V
    ID (drain current) 18.5 A
    Vds-Drain-Source-Breakdown-Voltage 600 V
    Rds-On-Drain-Source-Resistance 380 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 150 ns
    Turn-On Delay Time 65 ns
    Transconductance 16 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Weitere Informationen
  • Datasheet: Download FQA19N60
  • Chipdaten Teil: CD86-FQA19N60
  • Lagerhaus: China, Hongkong
  • Versenden: Innerhalb von 24 Stunden
  • Kostenloser Versand: Yes
  • Bevorzugter Versand: Yes, 3-5 days
  • Letzte Aktualisierung: 2024/06/13 18:03 +0800
Refund
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    • Vollständige oder teilweise Rückerstattung, wenn der Artikel nicht der Beschreibung entspricht
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