Description

The S25FL256SAGMFIR01 is a flash non-volatile memory product that belongs to the Memory category. It features MirrorBit technology that stores two data bits in each memory array transistor, and the Eclipse architecture that significantly improves program and erase performance. This device has a lithography of 65 nm process and comes with a Serial Peripheral Interface (SPI) that supports Single I/O (SIO), Dual I/O (DIO), and Quad I/O (QIO) serial commands. It also has Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock.

Specifications and features

• Density: 128 Mbits (16 Mbytes) and 256 Mbits (32 Mbytes)
• Serial clock polarity and phase modes 0 and 3
• Extended Addressing: 24- or 32-bit address options
• Multi I/O Command set and footprint compatible with S25FL-P SPI family
• Programming buffer options: 256 or 512 Byte Page Programming buffer options and Quad-Input Page Programming (QPP) for slow clock systems
• Erases uniform sector option - always erase 256-kbyte blocks for software compatibility with higher density and future devices
• Cycling Endurance of 100,000 Program-Erase Cycles on any sector typical
• Data Retention of 20 Year Data Retention typical
• Security features such as one-time program (OTP) array of 1024 bytes, block protection and advanced sector protection (ASP)
• Core Supply Voltage: 2.7V to 3.6V and I/O Supply Voltage: 1.65V to 3.6V
• Temperature Range: Industrial (-40°C to +85°C) and Automotive In-Cabin (-40°C to +105°C)
• Packages available: 16-lead SOIC (300 mil), WSON 6 x 8 mm, BGA-24 6 x 8 mm, 5 x 5 ball (FAB024) and 4 x 6 ball (FAC024) footprint options, Known Good Die and Known Tested Die

Application Scenarios

The S25FL256SAGMFIR01 is ideal for code shadowing, XIP, and data storage in a variety of embedded applications.

Comparison

• MirrorBit technology allows storing two data bits in each memory array transistor.
• Eclipse architecture dramatically improves program and erase performance.
• 65 nm process lithography.
• Serial Peripheral Interface (SPI) that supports Single I/O (SIO), Dual I/O (DIO), and Quad I/O (QIO) serial commands.
• Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock.
• Eclipse architecture features a Page Programming Buffer that allows faster effective programming and erase than prior generation SPI program or erase algorithms.
• Executing code directly from flash memory reduces signal count dramatically while matching or exceeding traditional parallel interface, asynchronous, NOR flash memories.

• This model has no significant disadvantages as compared to other models in the same category.