IRF9530NPBF - Brand New IR Field Effect Tube (MOSFET)
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Description
The IRF9530NPBF is a fifth-generation HEXFET with advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design, make HEXFET Power MOSFETs highly efficient and reliable for a wide range of applications. It is a P-channel field effect tube with a VDSS of -100V and ID of -14A. The IRF9530NPBF is a fully avalanche rated and lead-free device with a dynamic dv/dt Rating and operating temperature of 175°C.
Specifications and Features
- Product Category: Field Effect Tube (MOSFET)
- VDSS = -100V
- RDS(on) = 0.20Ω
- ID = -14A
- Fast switching speed
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fully Avalanche Rated
- P-Channel
- Lead-Free
Application Scenarios
The IRF9530NPBF is an ideal component for a wide range of applications. It can be used in power supplies, motor controls, audio amplifiers, and other types of electronic circuits where low on-resistance and fast switching are critical. Its fully avalanche rated and lead-free design is perfect for environmentally-conscious applications.
Comparison
Advantages- Low on-resistance per silicon area for high efficiency
- Fast switching speed for improved performance
- Ruggedized device design for increased reliability
- Diverse range of applications
Disadvantages- Only suitable for use as a P-channel device
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Similar parts: 25937 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Popular parts of the same kind
- Datasheet: Download IRF9530NPBF
- Chipdatas Part: CD91-IRF9530NPBF
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/20 05:38 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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