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FQB7N10LTM - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FQB7N10LTM - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)

In Stock:2660 ,Ready for Immediate Shipping
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In Stock: 2660, Ready for Immediate Shipping
Chipdatas Teilenummer:CD86-FQB7N10LTM
Hersteller-Teile-Nr.:FQB7N10LTM
Datumscode:09+
Paket:TO-263-3, D²Pak 2 Leads + Tab, TO-263AB
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  • Description

    The FQB7N10LTM is an N-Channel enhancement mode power field effect transistor, also known as MOSFET. This electronic component is produced using Fairchild's planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance and withstands high energy pulse in the avalanche and commutation modes. It is widely used in low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

    Specifications and features

    The key specifications and features of the FQB7N10LTM MOSFET are:

    • Current rating: 7.3A
    • Maximum voltage rating: 100V
    • On-state resistance: 0.35Ω @ VGS = 10 V
    • Low gate charge (typical 4.6 nC)
    • Low Crss (typical 12 pF)
    • Fast switching
    • 100% avalanche tested
    • Improved dv/dt capability
    • Maximum junction temperature rating: 175°C
    • Low-level gate drive requirements, allowing direct operation from logic drives

    Application Scenarios

    The FQB7N10LTM MOSFET is particularly suited for use in low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

    Comparison

    Advantages
    • Low on-state resistance
    • Superior switching performance
    • Can withstand high energy pulse in the avalanche and commutation modes
    • Improved dv/dt capability
    • High temperature rating
    • Low-level gate drive requirements
    Disadvantages

    The FQB7N10LTM MOSFET is limited to low voltage applications and may not be suitable for high voltage applications.

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    Attribute Parameterwert
    Kategorie Field Effect Tube (MOSFET)
    Manufacturer ON Semiconductor
    Product Category FETs - Single
    Categories Transistors - FETs, MOSFETs - Single
    Series QFET?
    Packaging Tape & Reel (TR)
    Part-Status Obsolete
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 100V
    Current-Continuous-Drain-Id-25°C 7.3A (Tc)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 5V, 10V
    Vgs-th-Max-Id 2V @ 250?A
    Gate-Charge-Qg-Max-Vgs 6nC @ 5V
    Vgs-Max ±20V
    Input-Capacitance-Ciss-Max-Vds 290pF @ 25V
    FET-Feature -
    Power-Dissipation-Max 3.75W (Ta), 40W (Tc)
    Rds-On-Max-Id-Vgs 350 mOhm @ 3.65A, 10V
    Operating-Temperature -55°C ~ 175°C (TJ)
    Mounting-Type Surface Mount
    Supplier-Device-Package D?PAK (TO-263AB)
    Package-Case TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
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  • Shopping guide

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    • - 90-day warranty against any manufacturing defects. View more
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Weitere Informationen
  • Datasheet: Download FQB7N10LTM
  • Chipdaten Teil: CD86-FQB7N10LTM
  • Lagerhaus: China, Hongkong
  • Versenden: Innerhalb von 24 Stunden
  • Kostenloser Versand: Yes
  • Bevorzugter Versand: Yes, 3-5 days
  • Letzte Aktualisierung: 2024/07/01 10:01 +0800
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