FQB7N10LTM - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)
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Description
The FQB7N10LTM is an N-Channel enhancement mode power field effect transistor, also known as MOSFET. This electronic component is produced using Fairchild's planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance and withstands high energy pulse in the avalanche and commutation modes. It is widely used in low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
Specifications and features
The key specifications and features of the FQB7N10LTM MOSFET are:
- Current rating: 7.3A
- Maximum voltage rating: 100V
- On-state resistance: 0.35Ω @ VGS = 10 V
- Low gate charge (typical 4.6 nC)
- Low Crss (typical 12 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Maximum junction temperature rating: 175°C
- Low-level gate drive requirements, allowing direct operation from logic drives
Application Scenarios
The FQB7N10LTM MOSFET is particularly suited for use in low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
Comparison
Advantages- Low on-state resistance
- Superior switching performance
- Can withstand high energy pulse in the avalanche and commutation modes
- Improved dv/dt capability
- High temperature rating
- Low-level gate drive requirements
DisadvantagesThe FQB7N10LTM MOSFET is limited to low voltage applications and may not be suitable for high voltage applications.
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Datenblatt
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Shopping guide
Delivery period:
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Beliebte Teile der gleichen Art
- Datasheet: Download FQB7N10LTM
- Chipdaten Teil: CD86-FQB7N10LTM
- Lagerhaus: China, Hongkong
- Versenden: Innerhalb von 24 Stunden
- Kostenloser Versand: Yes
- Bevorzugter Versand: Yes, 3-5 days
- Letzte Aktualisierung: 2024/10/01 18:53 +0800
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