FDP12N50 - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)
In Stock:8437 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
8437,
Ready for Immediate Shipping
Brand:Fairchild Semiconductor
Category:Field Effect Tube (MOSFET)
Chipdatas Part No.:CD86-FDP12N50
Manufacturer Part No.:FDP12N50
Datecode:09+
Package:TO-220-3
€28.33000 /PCS
Each contains 0 PCS
≥1:
€28.33000
≥10:
€28.05000
≥50:
€27.77000
≥100:
€26.92000
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Description
The FDP12N50 is an N-Channel enhancement mode power field effect transistor, which is categorized as a MOSFET component. It features Fairchild’s proprietary, planar stripe, DMOS technology that has been designed to reduce on-state resistance, enhance switching performance, and endure high energy pulses in the avalanche and commutation mode.
Specifications and features
The key specifications and features for the FDP12N50 MOSFET are:
- RDS(on) = 0.55Ω (Typ.) @ VGS = 10V, ID = 6A
- Low gate charge (Typ. 22nC)
- Low Crss (Typ. 11pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
Application Scenarios
The FDP12N50 MOSFET is an ideal component for high-efficiency switched-mode power supplies and active power factor correction applications.
Comparison
Advantages- Reduced on-state resistance
- Enhanced switching performance
- Ability to withstand high energy pulses in the avalanche and commutation mode.
Disadvantages- May not be suitable for certain low-power applications.
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Datasheet
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Shopping guide
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Additional Information
- Datasheet: Download FDP12N50
- Chipdatas Part: CD86-FDP12N50
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 18:59 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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