FQA9N90C - Brand New onsemi Field Effect Tube (MOSFET)
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Description
Introducing the FQA9N90C, an N-channel enhancement mode power field effect transistor that comes in a Field Effect Tube (MOSFET) product category. Developed using Fairchild’s planar stripe DMOS technology, this category of FET minimizes on-state resistance, offers superior switching performance, and can withstand high energy pulse in the avalanche and commutation mode. This MOSFET device is well-suited for high efficient switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.
Specifications and features
- 9A, 900V, RDS(on)= 1.4Ω@VGS= 10 V
- Low gate charge (typical 45 nC)
- Low Crss (typical 14pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Application Scenarios
These FETs are well-suited for high efficient switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.
Comparison
Advantages- Low gate charge allows for more efficient switching performance
- Low Crss allows for reduced signal distortion
- Faster switching capability allows for more rapid data transfer
- Improved dv/dt capability reduces the risk of damage from voltage spikes
Disadvantages- May not be suitable for specific power applications that require a different type of MOSFET device
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Datenblatt
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
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Beliebte Teile der gleichen Art
- Datasheet: Download FQA9N90C
- Chipdaten Teil: CD86-FQA9N90C
- Lagerhaus: China, Hongkong
- Versenden: Innerhalb von 24 Stunden
- Kostenloser Versand: Yes
- Bevorzugter Versand: Yes, 3-5 days
- Letzte Aktualisierung: 2024/06/13 16:33 +0800
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