S29GL01GP11TFIR2 - Brand New SPANSIO Memory
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Description
Electronic Component Model: S29GL01GP11TFIR2
Product Category: Memory
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology. The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Specifications and features
Single 3V read/program/erase (2.7-3.6 V)
Enhanced VersatileI/O™ control
All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
90 nm MirrorBit process technology
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall programming time for multiple-word updates
Secured Silicon Sector region
128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
Can be programmed and locked at the factory or by the customer
Uniform 64 Kword/128 Kbyte Sector Architecture
100,000 erase cycles per sector typical
20-year data retention typical
Offered Packages: 56-pin TSOP, 64-ball Fortified BGA
Suspend and Resume commands for Program and Erase operations
Write operation status bits indicate program and erase operation completion
Unlock Bypass Program command to reduce programming time
Support for CFI (Common Flash Interface)
Persistent and Password methods of Advanced Sector Protection
WP#/ACC input
Accelerates programming time (when VHH is applied) for greater throughput during system production
Protects first or last sector regardless of sector protection settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase cycle completion
Application Scenarios
These flash memory devices are suitable for embedded applications that require higher density, better performance, and lower power consumption. They can be used in various electronic devices and systems such as smartphones, tablets, digital cameras, and automotive electronics.
Comparison
Advantages- Fast page access time
- Write Buffer allows for faster effective programming time
- Higher density
- Better performance
- Lower power consumption
Disadvantages- Limited to 3.0 Volt-only Page Mode
- Limited to specific memory capacities (1 Gigabit, 512 Megabit, 256 Megabit, and 128 Megabit)
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Similar parts: 9920 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
- - Automatic Email notification (above 5 times)
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
- - In-stock, Add to cart > Check out > Submit order > Complete payment >Delivery.
- - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Payment:
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- - Wire transfer, include Local bank transfer.
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Popular parts of the same kind
- Datasheet: Download S29GL01GP11TFIR2
- Chipdatas Part: CD86-S29GL01GP11TFIR2
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/02 11:50 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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We recommend to use bank transfer for large orders to save on handling fees.
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