BFR193 E6327 - Brand New Infineon RF Transistors (BJT)
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Description
Electronic Component Model: BFR193 E6327 is a NPN Bipolar RF Transistor designed for low noise, high-gain amplifiers up to 2 GHz. It is suitable for linear broadband amplifiers with its fT of 8 GHz and NFmin of 1 dB at 900 MHz. The transistor is available in a Pb-free (RoHS compliant) package and comes with a qualification report according to AEC-Q101.
Specifications and features
NPN Bipolar RF Transistor
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz
NFmin = 1 dB at 900 MHz
Pb-free (RoHS compliant) package
Qualification report according to AEC-Q101 availableApplication Scenarios
The BFR193 E6327 RF Transistor is ideal for use in low noise, high-gain amplifiers up to 2 GHz. It is also suitable for linear broadband amplifiers.
Comparison
Advantages- Designed for low noise and high-gain amplifiers
Disadvantages- Limited to applications up to 2 GHz
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Similar parts: 819 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download BFR193 E6327
- Chipdatas Part: CD94-BFR193 E6327
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/21 12:42 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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