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KST10MTF - Brand New Fairchild Semiconductor RF Transistors (BJT) - Datasheet - Chipdatas

KST10MTF - Brand New Fairchild Semiconductor RF Transistors (BJT)

In Stock:8234 ,Ready for Immediate Shipping
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In Stock: 8234, Ready for Immediate Shipping
Chipdatas Part No.:CD87-KST10MTF
Manufacturer Part No.:KST10MTF
Datecode:09+
Package:SOT-23
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  • Description

    The KST10MTF is a VHF/UHF transistor belonging to the category of RF transistors (BJT). It is a versatile component designed for low power applications in wireless communication systems.

    Specifications and features

    • Maximum Collector-Base Voltage (Vcb): 60 V
    • Maximum Collector-Emitter Voltage (Vce): 20 V
    • Maximum Collector Current (Ic): 50 mA
    • Transition Frequency (ft): 3 GHz
    • Hfe (min): 120

    Application Scenarios

    The KST10MTF is primarily used in signal amplification, oscillation, and mixing circuits for FM and UHF-band broadcasting. It can also be used in low-power wireless communication systems such as cordless phones, remote controls, and wireless sensors.

    Comparison

    Advantages
    • High transition frequency for better amplification efficiency
    • Low noise and low distortion
    • Small and compact size for easy integration into circuits
    Disadvantages
    • Not suitable for high power applications
    • Not designed for use in low-frequency circuits
  • Similar parts: 819 , Click to view
    Attributes Value
    Category RF Transistors (BJT)
    Manufacturer Fairchild Semiconductor
    Product Category RF Transistors (BJT)
    Series -
    Packaging Alternate Packaging
    Part-Aliases KST10MTF_NL
    Unit-Weight 0.002116 oz
    Mounting-Style SMD/SMT
    Package-Case TO-236-3, SC-59, SOT-23-3
    Mounting-Type Surface Mount
    Supplier-Device-Package SOT-23-3
    Configuration Single
    Power-Max 350mW
    Transistor-Type NPN
    Electric current collectors -
    Voltage-Collector-Emitter-Breakdown-Max 25V
    DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 4mA, 10V
    Frequency-Transition 650MHz
    Noise-Figure-dB-Typ-f -
    Gain -
    Pd-Power-Dissipation 350 mW
    Maximum Operating Temperature + 150 C
    Collector-Emitter-Voltage-VCEO-Max 25 V
    Transistor-Polarity NPN
    Collector-Emitter-Saturation-Voltage 0.5 V
    Collector-Base-Voltage-VCBO 30 V
    Emitter-Base-Voltage-VEBO 3 V
    Gain-Bandwidth-Product-fT 650 MHz
    DC-Collector-Base-Gain-hfe-Min 60
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

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    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download KST10MTF
  • Chipdatas Part: CD87-KST10MTF
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/26 06:32 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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