BFP540E6327 - Brand New Infineon RF Transistors (BJT)
In Stock:2560 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
2560,
Ready for Immediate Shipping
Brand:Infineon
Category:RF Transistors (BJT)
Chipdatas Part No.:CD94-BFP540E6327
Manufacturer Part No.:BFP540E6327
Datecode:09+
Package:SOT343-4-2
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Description
The BFP540E6327 is a low noise silicon bipolar RF transistor. It is designed for ESD protected high gain low noise amplifiers. The transistor offers high ESD robustness with a typical value of 1000 V (HBM). It has outstanding Gms of 21.5 dB at 1.8 GHz and a minimum noise figure of 0.9 dB at 1.8 GHz. The transistor is also Pb-free (RoHS compliant) and has a halogen-free package with visible leads. A qualification report according to AEC-Q101 is available.
Specifications and Features
- Low noise silicon bipolar RF transistor
- Designed for ESD protected high gain low noise amplifiers
- High ESD robustness with typical value of 1000 V (HBM)
- Outstanding Gms of 21.5 dB at 1.8 GHz
- Minimum noise figure of 0.9 dB at 1.8 GHz
- Pb-free (RoHS compliant) and halogen-free package with visible leads
- Qualification report according to AEC-Q101 available
Application Scenarios
The BFP540E6327 RF transistor is ideal for use in ESD protected high gain low noise amplifiers. It can be used in various applications that require low noise and high gain, such as wireless communication systems, amplifiers, and receivers.
Comparison
Advantages- High ESD robustness
- Low noise figure
Disadvantages- None
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Similar parts: 819 , Click to view
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Datasheet
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Additional Information
- Datasheet: Download BFP540E6327
- Chipdatas Part: CD94-BFP540E6327
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/25 10:55 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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