FQB1N60TM - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)
In Stock:2650 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
2650,
Ready for Immediate Shipping
Brand:Fairchild Semiconductor
Category:Field Effect Tube (MOSFET)
Chipdatas Part No.:CD86-FQB1N60TM
Manufacturer Part No.:FQB1N60TM
Datecode:09+
Package:TO-263-3, D²Pak 2 Leads + Tab, TO-263AB
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Description
The FQB1N60TM is a N-Channel enhancement mode power field effect transistor that belongs to the MOSFET product category. It is manufactured using Fairchild's planar stripe DMOS technology, which is highly efficient and provides superior switching performance while minimizing on-state resistance. The device is designed to withstand high energy pulse in the avalanche and commutation mode and is ideal for use in high-efficiency switch mode power supplies.
Specifications and features
- 1.2A, 600V, RDS(on) = 11.5Ω @VGS = 10 V
- Low gate charge (typical 5.0 nC)
- Low Crss (typical 3.0 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Application Scenarios
The FQB1N60TM MOSFET can be used in a wide range of applications, including:
- High-efficiency switch mode power supplies
- DC-DC converters
- Inverters
Comparison
Advantages- Low on-state resistance and superior switching performance
- Can withstand high energy pulses in the avalanche and commutation mode
- Improved dv/dt capability
Disadvantages- None identified
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Additional Information
- Datasheet: Download FQB1N60TM
- Chipdatas Part: CD86-FQB1N60TM
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 18:08 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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