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Description
SVF1N60B is an N-channel enhancement mode power MOS field effect transistor used in electronic components. It is produced using Silan proprietary F-Cell™ structure VDMOS technology, which includes an improved planar stripe cell and an improved guard ring terminal. These enhancements minimize on-state resistance, provide superior switching performance, and allow the transistor to withstand high energy pulses in avalanche and commutation mode.
Specifications and features
∗ 12A, 600V, RDS(on)(typ)=0.58Ω @ VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
Application Scenarios
The SVF1N60B transistor can be used in various electronic applications, such as power supplies, motor control systems, lighting systems, and audio amplifiers. It is suitable for applications that require high voltage and current handling capabilities.
Comparison
Advantages1. Low on-state resistance
2. Superior switching performance
3. High energy pulse withstand capability
4. Improved dv/dt capability
Disadvantages1. Not suitable for low voltage applications
2. May require additional heat dissipation measures in high power applications
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Datenblatt
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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- - View in your order page
Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
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Payment:
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Beliebte Teile der gleichen Art
- Datasheet: Download SVF1N60B
- Chipdaten Teil: CD94-SVF1N60B
- Lagerhaus: China, Hongkong
- Versenden: Innerhalb von 24 Stunden
- Kostenloser Versand: Yes
- Bevorzugter Versand: Yes, 3-5 days
- Letzte Aktualisierung: 2024/07/01 16:08 +0800
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