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Description
SVF1N60B is an N-channel enhancement mode power MOS field effect transistor used in electronic components. It is produced using Silan proprietary F-Cell™ structure VDMOS technology, which includes an improved planar stripe cell and an improved guard ring terminal. These enhancements minimize on-state resistance, provide superior switching performance, and allow the transistor to withstand high energy pulses in avalanche and commutation mode.
Specifications and features
∗ 12A, 600V, RDS(on)(typ)=0.58Ω @ VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
Application Scenarios
The SVF1N60B transistor can be used in various electronic applications, such as power supplies, motor control systems, lighting systems, and audio amplifiers. It is suitable for applications that require high voltage and current handling capabilities.
Comparison
Advantages1. Low on-state resistance
2. Superior switching performance
3. High energy pulse withstand capability
4. Improved dv/dt capability
Disadvantages1. Not suitable for low voltage applications
2. May require additional heat dissipation measures in high power applications
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download SVF1N60B
- Chipdatas Part: CD94-SVF1N60B
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/07/01 16:21 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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