BFP540E6327 - Brand New Infineon RF Transistors (BJT)
In Stock:2560 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
2560,
Ready for Immediate Shipping
Marke:Infineon
Kategorie:RF Transistors (BJT)
Chipdatas Teilenummer:CD94-BFP540E6327
Hersteller-Teile-Nr.:BFP540E6327
Datumscode:09+
Paket:SOT343-4-2
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Description
The BFP540E6327 is a low noise silicon bipolar RF transistor. It is designed for ESD protected high gain low noise amplifiers. The transistor offers high ESD robustness with a typical value of 1000 V (HBM). It has outstanding Gms of 21.5 dB at 1.8 GHz and a minimum noise figure of 0.9 dB at 1.8 GHz. The transistor is also Pb-free (RoHS compliant) and has a halogen-free package with visible leads. A qualification report according to AEC-Q101 is available.
Specifications and Features
- Low noise silicon bipolar RF transistor
- Designed for ESD protected high gain low noise amplifiers
- High ESD robustness with typical value of 1000 V (HBM)
- Outstanding Gms of 21.5 dB at 1.8 GHz
- Minimum noise figure of 0.9 dB at 1.8 GHz
- Pb-free (RoHS compliant) and halogen-free package with visible leads
- Qualification report according to AEC-Q101 available
Application Scenarios
The BFP540E6327 RF transistor is ideal for use in ESD protected high gain low noise amplifiers. It can be used in various applications that require low noise and high gain, such as wireless communication systems, amplifiers, and receivers.
Comparison
Advantages- High ESD robustness
- Low noise figure
Disadvantages- None
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Datenblatt
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Shopping guide
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- - EMS: 10-15 business days
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Weitere Informationen
- Datasheet: Download BFP540E6327
- Chipdaten Teil: CD94-BFP540E6327
- Lagerhaus: China, Hongkong
- Versenden: Innerhalb von 24 Stunden
- Kostenloser Versand: Yes
- Bevorzugter Versand: Yes, 3-5 days
- Letzte Aktualisierung: 2024/07/01 08:12 +0800
Refund
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