Description

The FDP12N50 is a field effect transistor (FET) that belongs to the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) category. Fairchild utilizes planar stripe, DMOS technology to produce this N-channel enhancement mode power FET. The technology used to create this transistor is optimized to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. This device is particularly appropriate for high-efficient switch-mode power supplies and active power factor correction.

Specifications and features

The various characteristics and features of the FDP12N50 MOSFET include:

• RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 22nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

Application Scenarios

The FDP12N50 MOSFET is well-suited for applications such as switched-mode power supplies and active power factor correction due to its superior switching performance, and capability to handle high energy pulses in avalanche and commutation modes. It is particularly useful in situations where high efficiency is crucial.

Comparison

• Low on-state resistance, ensuring that the power loss during operation is kept to a minimum.
• 100% avalanche tested, ensuring that the MOSFET is much less likely to fail in high-stress situations.
• Improved dv/dt capability, ensuring that the MOSFET can handle the high-voltage stresses produced during switching operations.

• None specified.