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MUN2211T1 - Brand New ON Semiconductor Single, Pre-Biased BJTs - Datasheet - Chipdatas

MUN2211T1 - Brand New ON Semiconductor Single, Pre-Biased BJTs

In Stock:32080 ,Ready for Immediate Shipping
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In Stock: 32080, Ready for Immediate Shipping
Chipdatas Teilenummer:CD86-MUN2211T1
Hersteller-Teile-Nr.:MUN2211T1
Datumscode:09+
Paket:TO-236-3, SC-59, SOT-23-3
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  • Description

    The MUN2211T1 is a single NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network. It is a Bias Resistor Transistor (BRT) designed to replace a single device and its external resistor bias network. The device is housed in the SC−59 package, suitable for low power surface mount applications. The use of MUN2211T1 can reduce both system cost and board space.

    Specifications and Features

    • Product Category: Single, Pre-Biased BJTs
    • Transistor Polarity: NPN
    • Collector- Emitter Voltage VCEO Max: 50V
    • Continuous Collector Current Ic Max: 100mA
    • Power Dissipation Pd: 200mW
    • DC Current Gain hFE Min: 100
    • Transistor Case Style: SC-59
    • No. of Pins: 3

    Application Scenarios

    The MUN2211T1 can be used in various digital applications where a pre-biased transistor is required. It is typically used in amplifier and switching circuits.

    Comparison

    Advantages
    • Simplifies Circuit Design
    • Reduces Board Space and Component Count
    • Eliminates the need for an external bias resistor network
    • Available in Pb-Free packages
    Disadvantages
    • Low power handling capability
    • Limited current and voltage ratings
  • ähnliche Teile: 2174 , Klicke zum Zeigen
    Attribute Parameterwert
    Kategorie Single, Pre-Biased BJTs
    Manufacturer ON Semiconductor
    Product Category Single, Pre-Biased BJTs
    Mfr onsemi
    Series -
    Package Bulk
    Product-Status Active
    Transistor-Type NPN - Pre-Biased
    Current-Collector-Ic-Max 100 mA
    Voltage-Collector-Emitter-Breakdown-Max 50 V
    Resistor-Base-R1 10 kOhms
    Resistor-Emitter-Base-R2 10 kOhms
    DC-Current-Gain-hFE-Min-Ic-Vce 35 @ 5mA 10V
    Vce-Saturation-Max-Ib-Ic 250mV @ 300µA 10mA
    Current-Collector-Cutoff-Max 500nA
    Power-Max 338 mW
    Mounting-Type Surface Mount
    Package-Case TO-236-3 SC-59 SOT-23-3
    Supplier-Device-Package SC-59
    Base-Product-Number MUN22
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    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Weitere Informationen
  • Datasheet: Download MUN2211T1
  • Chipdaten Teil: CD86-MUN2211T1
  • Lagerhaus: China, Hongkong
  • Versenden: Innerhalb von 24 Stunden
  • Kostenloser Versand: Yes
  • Bevorzugter Versand: Yes, 3-5 days
  • Letzte Aktualisierung: 2024/07/01 02:56 +0800
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