BFP183W E6327 - Brand New Infineon RF Transistors (BJT)
In Stock:1068 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
1068,
Ready for Immediate Shipping
Brand:Infineon
Category:RF Transistors (BJT)
Chipdatas Part No.:CD91-BFP183W E6327
Manufacturer Part No.:BFP183W E6327
Datecode:09+
Package:SOT-343
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Description
Electronic Component Model: BFP183W E6327 is a low noise silicon bipolar RF transistor. It is designed for low noise, high-gain broadband amplifiers and is suitable for collector currents ranging from 2 mA to 30 mA. With a frequency of 8 GHz (fT) and a minimum noise figure of 0.9 dB at 900 MHz (NFmin), the BFP183W E6327 provides excellent performance for RF applications. The package is Pb-free (RoHS compliant) and halogen-free with visible leads. It also has a qualification report according to AEC-Q101 available.
Specifications and features
- Low Noise Silicon Bipolar RF Transistor
- Designed for low noise, high-gain broadband amplifiers
- Collector currents ranging from 2 mA to 30 mA
- fT = 8 GHz
- NFmin = 0.9 dB at 900 MHz
- Pb-free (RoHS compliant) and halogen-free package with visible leads
- Qualification report according to AEC-Q101 available
Application Scenarios
The BFP183W E6327 RF transistor is ideal for use in various RF applications that require low noise and high-gain amplification. It can be used in applications such as:
- Broadband amplifiers
- RF communication systems
- Wireless devices
- Amateur radio
Comparison
Advantages- Low noise
- High gain
- Broadband amplification
- Pb-free and halogen-free
Disadvantages- Limited collector currents ranging from 2 mA to 30 mA
- Specific frequency limitations
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Datasheet
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Additional Information
- Datasheet: Download BFP183W E6327
- Chipdatas Part: CD91-BFP183W E6327
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 17:05 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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