Description

Hewlett Packard’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3-lead SOT-23, while the AT-320 11 places the same die in the higher performance 4-lead SOT-143. Both packages are industry standard and compatible with high volume surface mount assembly techniques. The 3.2-micron emitter-to-emitter pitch and reduced parasitic design of these transistors yield extremely high-performance products that can perform a multiplicity of tasks. The 20-emitter finger interdigitated geometry yields an easy-to-match and extremely fast transistor with moderate power, low noise resistance, and low operating currents.

Specifications and features

• Product Category: RF Transistors (BJT)
• Optimized for low-current and low-voltage operation
• Characterized for end-of-life battery use (2.7 V)
• SOT-23 and SOT-143 SMT plastic packages
• Tape-and-reel packaging option available
• 900 MHz performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA

Application Scenarios

This model can be used in the following application scenarios:

• Wireless markets
• Battery-powered applications

Comparison

• Optimized for low-current and low-voltage operation
• Characterized for end-of-life battery use (2.7 V)
• High-performance bipolar transistor
• Compatibility with high-volume surface mount assembly techniques and industry-standard packages
• Easy to match and extremely fast transistor with moderate power, low noise resistance, and low operating currents

None identified.