Description

The S29GL032N90BFI04 is a 32-Mb flash memory device from the S29GL-N family, which uses 110 nm MirrorBit technology and has a single power supply operation. It can be programmed in the host system or in a standard EPROM programmer.

Specifications and Features

• Organized as 2,097,152 words or 4,194,304 bytes
• 16-bit wide data bus or 16-bit wide data bus that can also act as an 8-bit wide data bus
• Architectural advantages like flexible sector architecture, secured silicon sector region, JEDEC standards compatibility
• Multi-level enhanced versatile I/O control
• High performance with 90 ns access time, 8-word/16-byte page read buffer, 25 ns page read time, and 16-word/32-byte write buffer
• Low power consumption with 1 µA typical standby mode current, 25 mA typical initial read current, 1 mA typical page read current, and 50 mA typical erase/program current
• The device is available in 48-pin TSOP, 56-pin TSOP, 64-ball Fortified BGA and 48-ball fine-pitch BGA.
• Software features such as advanced sector protection, program Suspend & Resume, erase Suspend & Resume, and CFI (Common Flash Interface) compliant
• Hardware features like WP#/ACC input and ready/busy# output

Application Scenarios

This flash memory device can be used for various electronic applications that require non-volatile, high-density, and low-power-consuming memory storage, such as smartphones, tablets, digital cameras, and MP3 players.

Comparison

• High erase cycles of up to 100,000 times per sector
• Long data retention time of up to 20 years
• Advanced sector protection and password sector protection
• Flexible sector architecture
• Reduced overall programming time for multiple-word updates

• More expensive compared to other types of non-volatile memory storage
• Higher power consumption compared to other types of non-volatile memory storage