BFG193 - Brand New Infineon RF Transistors (BJT)
In Stock:23558 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
23558,
Ready for Immediate Shipping
Brand:Infineon
Category:RF Transistors (BJT)
Chipdatas Part No.:CD91-BFG193
Manufacturer Part No.:BFG193
Datecode:09+
Package:TO-261-4, TO-261AA
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Description
The BFG193 is a NPN Silicon RF Transistor designed for low noise, high-gain amplifiers up to 2 GHz. It is also suitable for linear broadband amplifiers with a frequency range of 8 GHz. The BFG193 boasts of a gain of 1.3 dB at 900 MHz, making it an excellent choice for amplification applications in the GHz range.
Specifications and Features
- Product Category: RF Transistors (BJT)
- Transistor Polarity: NPN
- Collector- Base Voltage, VCB: 50V
- Emitter- Base Voltage, VEB: 5V
- DC Collector Current: 70mA
- Power Dissipation Pd: 500mW
- Transition Frequency Typ ft: 8GHz
- Noise Figure Max NF: 1.2dB at 900MHz
- Operating Temperature Max: 150°C
Application Scenarios
The BFG193 is used for low noise high gain amplifiers and linear broadband amplifiers. The transistor works exceptionally well for amplification applications in the GHz range. The BFG193 can also be used in various applications such as low noise pre-amplifiers and inter-stages in cellular and PCS, FM, VHF, and UHF applications
Comparison
Advantages- Excellent gain at 900 MHz
- Wide frequency range
- Low noise figure
- High breakdown voltage
Disadvantages- High operating temperature limit of 150°C
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Datasheet
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Additional Information
- Datasheet: Download BFG193
- Chipdatas Part: CD91-BFG193
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 18:07 +0800
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- Full or Partial Refund , If the item is not as described
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