Description

The 06035J120FAWTRMOTS is an electronic component model in the IC Chips product category. It is a high efficiency/linearity amplifier based on Heterojunction Bipolar Transistor Technology (InGaP HBT).

This 2-stage amplifier is designed for use as a linear driver amplifier in wireless base station applications, as well as an output stage in femtocell or repeater applications. It operates at frequencies ranging from 1800 to 2200 MHz and is suitable for CDMA, TD-SCDMA, PCS, UMTS, and LTE applications.

The amplifier features a frequency range of 1800-2200 MHz, a P1dB of 30.5 dBm at 2140 MHz (CW Application Circuit), a power gain of 26.4 dB at 2140 MHz (CW Application Circuit), and an OIP3 of 44.5 dBm at 2140 MHz (W-CDMA Application Circuit). It also has active bias control that can be adjustable externally and operates on a single 3 to 5 V supply.

The 06035J120FAWTRMOTS is housed in a cost-effective, surface mount QFN plastic package and is available in tape and reel packaging.

Specifications and features

• Technology: Heterojunction Bipolar Transistor (InGaP HBT)
• Product Category: IC Chips
• Frequency Range: 1800-2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W-CDMA Application Circuit)
• Active Bias Control: Adjustable externally
• Operating Voltage: 3-5 V
• Package Type: 12-pin, 3 mm QFN Surface Mount Plastic Package
• Packaging: Tape and Reel

Application Scenarios

The 06035J120FAWTRMOTS is commonly used in wireless base stations, femtocells, repeaters, and other wireless communication applications that require high efficiency and linearity amplification. It is suitable for CDMA, TD-SCDMA, PCS, UMTS, and LTE frequencies.

Comparison

• High efficiency/linearity
• Wide frequency range
• Adjustable active bias control
• Cost-effective package

• Specifically designed for wireless base station and femtocell/repeater applications
• Operating voltage limited to 3-5 V