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Description
M/A-COM's MA4E2054D-287 is a gallium arsenide flipchip Schottky barrier diode. It is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diode is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration allows for pick and place insertion. This diode has a high cutoff frequency, making it suitable for use through millimeter wave frequencies. Typical applications for the MA4E2054D-287 include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. It can be used through 80 GHz.
Specifications and features
- Low Series Resistance
- Low Capacitance
- High Cutoff Frequency
- Silicon Nitride Passivation
- Polyimide Scratch Protection
- Designed for Easy Circuit Insertion
Application Scenarios
The MA4E2054D-287 can be used in various scenarios including:
- Single and double balanced mixers in PCN transceivers and radios
- Police radar detectors
- Automotive radar detectors
Comparison
Advantages- High cutoff frequency for use through millimeter wave frequencies
Disadvantages- None identified
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download MA4E2054D-287
- Chipdatas Part: CD86-MA4E2054D-287
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/02 14:20 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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