Description

The ICSIIC41C16100S and IC41LV16100S are high-performance CMOS Dynamic Random Access Memories with a capacity of 1,048,576 x 16 bits. These devices feature EDO Page Mode, which allows for accelerated cycle access. With EDO Page Mode, it is possible to have up to 1,024 random accesses within a single row, with an access cycle time as short as 20 ns per 16-bit word. The IC41C16100S is particularly suitable for use in 16- and 32-bit wide data bus systems, thanks to its Byte Write control for the upper and lower byte.

Specifications and Features

• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
  • Refresh Mode: 1,024 cycles /16 ms
  • RAS-Only, CAS-before-RAS (CBR), and Hidden Self-refresh Mode: 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
  • 5V ± 10% (IC41C16100S)
  • 3.3V ± 10% (IC41LV16100S)
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40°C to 85°C

Application Scenarios

The IC41C16100S-50K can be used in various electronic devices and systems that require high-performance, high-capacity CMOS Dynamic Random Access Memories. Some example application scenarios include:

• Computer systems
• Communication equipment
• Industrial control systems
• Automotive electronics

Comparison

- High-performance CMOS technology

- EDO Page Mode for accelerated cycle access

- Suitable for 16- and 32-bit wide data bus systems

- Wide temperature range: -40°C to 85°C

- Limited compatibility with lower voltage power supplies (IC41C16100S)