Description

This is an electronic component model: FDB2570. It falls under the category of Field Effect Tube (MOSFET). Specifically, it is an N-Channel MOSFET designed for switching on the primary side in isolated DC/DC converter applications. It is ideal for any application that requires a 150V MOSFET with low on-resistance and fast switching capabilities. This MOSFET offers faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications. It is easy and safe to drive, even at high frequencies, allowing for DC/DC power supply designs with higher overall efficiency.

Specifications and features

The FDB2570 MOSFET has the following specifications and features:

• Current: 22 A
• Voltage: 150 V
• Rds(on): 80 mΩ @ Vgs=10V, 90 mΩ @ Vgs=6V
• Low gate charge (40nC typical)
• Fast switching speed
• High performance trench technology for extremely low Rds(on)
• Maximum junction temperature rating: 175°C

Application Scenarios

This MOSFET model can be used in various application scenarios such as:

• Isolated DC/DC converter circuits
• Switching applications
• Power supply designs with higher efficiency requirements

Comparison

- Faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications
- Easy and safe to drive, even at high frequencies
- Enables DC/DC power supply designs with higher overall efficiency

- No specific disadvantages were mentioned in the provided information