Description

The K4T51163QE-ZCE6000 is a 512Mb DDR2 SDRAM electronic component model. It is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

Specifications and features

The key features of the K4T51163QE-ZCE6000 electronic component model are:

• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
• PASR(Partial Array Self Refresh)
• 50ohm ODT
• High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C T CASE < 95 °C
• All of Lead-free products are compliant for RoHS

Application Scenarios

The K4T51163QE-ZCE6000 electronic component model can be used in various applications that require high speed double data-rate transfer rates. It is suitable for general applications that benefit from the key features provided by DDR2 SDRAM technology.

Comparison

- High speed double data-rate transfer rates of up to 800Mb/sec/pin
- Complies with key DDR2 SDRAM features
- Programmable settings for CAS latency and additive latency
- Supports special functions such as PASR and 50ohm ODT
- Lead-free and compliant for RoHS