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FQI3N90TU - Brand New onsemi Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FQI3N90TU - Brand New onsemi Field Effect Tube (MOSFET)

In Stock:16914 ,Ready for Immediate Shipping
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In Stock: 16914, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD86-FQI3N90TU
Manufacturer Part No.:FQI3N90TU
Datecode:09+
Package:TO-262-3 Long Leads, I²Pak, TO-262AA
$0.36031 /PCS Each contains 0 PCS
≥1:
$0.36031
≥10:
$0.35670
≥50:
$0.35310
≥100:
$0.34229
Numbers (PCS) :
  • Description

    The FQI3N90TU is a N-Channel power field effect transistor, classified as a MOSFET - Metal-Oxide-Semiconductor Field-Effect Transistor. It has a maximum drain-source voltage of 900V and a maximum continuous drain current of 3.6A. This device is designed for use in high efficiency switch mode power supplies.

    Specifications and Features

    • Channel Type: N-Channel
    • Technology: DMOS
    • Maximum Drain-Source Voltage: 900V
    • Maximum Continuous Drain Current: 3.6A
    • On-State Resistance: 4.25Ω at VGS = 10V
    • Gate Charge: 20 nC (typical)
    • Crss: 8.0 pF (typical)
    • Switching Time (Ton/Toff): -
    • Avalanche Energy: 510 mJ
    • DV/Dt Rating: -
    • Package / Case: DPAK

    Application Scenarios

    The FQI3N90TU is well-suited for high efficiency switch mode power supplies and can be used in a variety of applications, such as DC-DC converters, voltage regulators, and motor control circuits.

    Comparison

    Advantages
    • Low on-state resistance
    • Fast switching performance
    • Low gate charge
    • Improved dv/dt capability
    Disadvantages
    • No significant disadvantages noted
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer ON Semiconductor
    Product Category FETs - Single
    Categories Transistors - FETs, MOSFETs - Single
    Series QFET?
    Packaging Tube
    Part-Status Obsolete
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 900V
    Current-Continuous-Drain-Id-25°C 3.6A (Tc)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 10V
    Vgs-th-Max-Id 5V @ 250?A
    Gate-Charge-Qg-Max-Vgs 26nC @ 10V
    Vgs-Max ±30V
    Input-Capacitance-Ciss-Max-Vds 910pF @ 25V
    FET-Feature -
    Power-Dissipation-Max 3.13W (Ta), 130W (Tc)
    Rds-On-Max-Id-Vgs 4.25 Ohm @ 1.8A, 10V
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Supplier-Device-Package I2PAK
    Package-Case TO-262-3 Long Leads, I?Pak, TO-262AA
  • Latest 5 Reviews
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
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    Delivery period:
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    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download FQI3N90TU
  • Chipdatas Part: CD86-FQI3N90TU
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 10:26 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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