FQI3N90TU - Brand New onsemi Field Effect Tube (MOSFET)
In Stock:16914 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
16914,
Ready for Immediate Shipping
Brand:onsemi
Category:Field Effect Tube (MOSFET)
Chipdatas Part No.:CD86-FQI3N90TU
Manufacturer Part No.:FQI3N90TU
Datecode:09+
Package:TO-262-3 Long Leads, I²Pak, TO-262AA
$0.36031 /PCS
Each contains 0 PCS
≥1:
$0.36031
≥10:
$0.35670
≥50:
$0.35310
≥100:
$0.34229
-
Description
The FQI3N90TU is a N-Channel power field effect transistor, classified as a MOSFET - Metal-Oxide-Semiconductor Field-Effect Transistor. It has a maximum drain-source voltage of 900V and a maximum continuous drain current of 3.6A. This device is designed for use in high efficiency switch mode power supplies.
Specifications and Features
- Channel Type: N-Channel
- Technology: DMOS
- Maximum Drain-Source Voltage: 900V
- Maximum Continuous Drain Current: 3.6A
- On-State Resistance: 4.25Ω at VGS = 10V
- Gate Charge: 20 nC (typical)
- Crss: 8.0 pF (typical)
- Switching Time (Ton/Toff): -
- Avalanche Energy: 510 mJ
- DV/Dt Rating: -
- Package / Case: DPAK
Application Scenarios
The FQI3N90TU is well-suited for high efficiency switch mode power supplies and can be used in a variety of applications, such as DC-DC converters, voltage regulators, and motor control circuits.
Comparison
Advantages- Low on-state resistance
- Fast switching performance
- Low gate charge
- Improved dv/dt capability
Disadvantages- No significant disadvantages noted
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Similar parts: 25937 , Click to view
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Datasheet
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Additional Information
- Datasheet: Download FQI3N90TU
- Chipdatas Part: CD86-FQI3N90TU
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 10:26 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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