Description

The AM29F200BT-120EF is a 2 Mbit, 5.0 Volt-only Flash memory component. It is organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0–DQ7, while the 16 bits are on DQ0–DQ15. This electronic component is available in 44-pin SO and 48-pin TSOP packages, as well as in Known Good Die (KGD) form. It can be programmed in-system with a standard 5.0 volt VCC supply and does not require a 12.0 volt VPP for program or erase operations. Reprogramming is also possible using standard EPROM programmers.

Specifications and Features

- 5.0 V for read and write operations, minimizing system level power requirements

- Manufactured on 0.32 µm process technology, compatible with 0.5 µm Am29F200A device

- High performance with access times as fast as 45 ns

- Low power consumption:
- 20 mA typical active read current (byte mode)
- 28 mA typical active read current for (word mode)
- 30 mA typical program/erase current
- 1 µA typical standby current

- Sector erase architecture with a range of sector sizes, supporting full chip erase

- Sector Protection features including a hardware method of locking a sector, temporary sector unprotect feature, and the ability to lock sectors via programming equipment

- Available in top or bottom boot block configurations

Application Scenarios

The AM29F200BT-120EF can be used in various applications that require non-volatile memory storage and reprogrammability. It is ideal for systems with low power requirements and where high performance and data integrity are critical.

Comparison

- 5.0 V operation reduces system power requirements

- High performance with fast access times

- Low power consumption

- Sector erase architecture allows for flexible data management

- Requires external programming equipment for sector locking