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NAND01GW3B2AZA6 - Brand New STMicroelectronics Memory - Datasheet - Chipdatas

NAND01GW3B2AZA6 - Brand New STMicroelectronics Memory

In Stock:70 ,Ready for Immediate Shipping
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In Stock: 70, Ready for Immediate Shipping
Category:Memory
Chipdatas Part No.:CD93-NAND01GW3B2AZA6
Manufacturer Part No.:NAND01GW3B2AZA6
Datecode:09+
Package:63-TFBGA
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  • Description

    The NAND01GW3B2AZA6 is a non-volatile Flash memory that utilizes the Single Level Cell (SLC) NAND cell technology. It is a part of the Small Page family and operates with either a 1.8V or 3V voltage supply. The device comes in various capacities ranging from 128Mbits to 1Gbit. The NAND01GW3B2AZA6 has a page size of either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare), depending on the bus width.

    Specifications and features

    - High density NAND Flash memories up to 1 Gbit memory array

    - Cost-effective solutions for mass storage applications

    - Supports x8 or x16 bus width

    - Pinout compatibility for all densities

    - Comes in 1.8V device (VDD = 1.7 to 1.95V) or 3.0V device (VDD = 2.7 to 3.6V)

    - Page size: x8 device - (512 + 16 spare) Bytes, x16 device - (256 + 8 spare) Words

    - Block size: x8 device - (16K + 512 spare) Bytes, x16 device - (8K + 256 spare) Words

    - Fast random and sequential access times

    - Fast page program time

    - Supports copy back program mode for fast page copy

    - Fast block erase time

    - Simple interface with microcontroller using chip enable 'don't care' option

    - Hardware data protection for program/erase lock during power transitions

    - High data integrity with 100,000 Program/Erase cycles and 10 years data retention

    - RoHS compliant and lead-free components

    - Development tools include error correction code software and hardware models, bad blocks management and wear leveling algorithms, file system OS native reference software, and hardware simulation models

    Application Scenarios

    - Mass storage applications

    - Devices requiring high-density memory

    - Devices requiring fast data access and programming

    Comparison

    Advantages

    - High-density memory array

    - Cost-effective solution for mass storage applications

    - Supports both x8 and x16 bus width

    - Fast random and sequential access times

    - Supports copy back program mode for fast page copy

    - Fast block erase time

    - Simple interface with microcontroller using chip enable 'don't care' option

    - High data integrity with 100,000 Program/Erase cycles and 10 years data retention

    - RoHS compliant and lead-free components

    Disadvantages

    - Requires a 1.8V or 3V voltage supply

    - Limited page size options depending on the bus width

    - Additional hardware may be required for data protection during power transitions

    - Development tools may require additional resources and expertise

  • Similar parts: 9920 , Click to view
    Attributes Value
    Category Memory
    Manufacturer STMicroelectronics
    Product Category Memory ICs
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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download NAND01GW3B2AZA6
  • Chipdatas Part: CD93-NAND01GW3B2AZA6
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 08:43 +0800
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    • Full or Partial Refund , If the item is not as described
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