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IRFR13N20DTRLP - Brand New IR Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IRFR13N20DTRLP - Brand New IR Field Effect Tube (MOSFET)

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Brand:IR
Chipdatas Part No.:CD93-IRFR13N20DTRLP
Manufacturer Part No.:IRFR13N20DTRLP
Datecode:09+
Package:TO-252-3, DPak 2 Leads + Tab, SC-63
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  • Description

    Electronic Component Model: IRFR13N20DTRLP is a field-effect tube (MOSFET) that is commonly used in electronic devices to control the flow of current. It has several benefits and applications in different industries.

    Specifications and features

    - Low Gate to Drain Charge: This model has low gate to drain charge, which helps in reducing switching losses.

    - Fully Characterized Capacitance: The capacitance, including effective COSS, is fully characterized, making it easier for designers to implement this component in their designs. (See App. Note AN1001)

    - Fully Characterized Avalanche Voltage and Current: The avalanche voltage and current of this model are fully characterized, ensuring its reliability and performance.

    Application Scenarios

    - High frequency DC-DC converters: This component is commonly used in high frequency DC-DC converters, where efficient power conversion is required.

    Comparison

    Based on the specifications and features mentioned above, the IRFR13N20DTRLP model offers the following advantages and disadvantages:

    Advantages

    - Low gate to drain charge reduces switching losses.

    - Fully characterized capacitance makes design implementation easier.

    - Fully characterized avalanche voltage and current ensure reliability and performance.

    Disadvantages

    - Not suitable for applications where high power handling is required.

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer IR
    Product Category FETs - Single
    Packaging Reel
    Unit-Weight 0.139332 oz
    Mounting-Style SMD/SMT
    Package-Case TO-252-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 110 W
    Operating temperature range - 55 C
    Fall-Time 10 ns
    Rise-Time 27 ns
    Vgs-Gate-Source-Voltage 30 V
    ID (drain current) 14 A
    Vds-Drain-Source-Breakdown-Voltage 200 V
    Rds-On-Drain-Source-Resistance 165 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 17 ns
    Turn-On Delay Time 11 ns
    Qg-Gate-Charge 25 nC
    Channel-Mode Enhancement
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    Warranty:
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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download IRFR13N20DTRLP
  • Chipdatas Part: CD93-IRFR13N20DTRLP
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 05:16 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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