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IPB80N06S2L-H5 - Brand New VISHAY Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IPB80N06S2L-H5 - Brand New VISHAY Field Effect Tube (MOSFET)

In Stock:95 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 95, Ready for Immediate Shipping
Brand:VISHAY
Chipdatas Part No.:CD93-IPB80N06S2L-H5
Manufacturer Part No.:IPB80N06S2L-H5
Datecode:09+
Package:TO-263-3, D²Pak 2 Leads + Tab, TO-263AB
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  • Description

    The IPB80N06S2L-H5 is a P-channel MOSFET electronic component model. It is designed with a logic level enhancement mode, making it suitable for various electronic applications. It is AEC qualified and can withstand a peak reflow temperature of up to 260°C. With an operating temperature of 175°C, it is built to handle high-temperature environments. The IPB80N06S2L-H5 is also RoHS compliant, making it an environmentally-friendly option. It has undergone 100% Avalanche testing to ensure its reliability and durability. This electronic component is primarily intended for reverse battery protection.

    Specifications and features

    • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection

    Application Scenarios

    The IPB80N06S2L-H5 can be used in various electronic applications, such as: - Reverse battery protection circuits - Power management systems - Automotive electronics - Industrial control systems

    Comparison

    Advantages
    - Logic level enhancement mode for easy integration - AEC qualified for reliable performance - Operates at high temperatures (up to 175°C) - RoHS compliant for environmental friendliness
    Disadvantages
    - May not be suitable for all types of electronic applications - Requires proper understanding of MOSFET technology for effective use
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer Infineon Technologies
    Product Category FETs - Single
    Categories Transistors - FETs, MOSFETs - Single
    Series OptiMOS?
    Packaging Tape & Reel (TR)
    Part-Status Obsolete
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 55V
    Current-Continuous-Drain-Id-25°C 80A (Tc)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 4.5V, 10V
    Vgs-th-Max-Id 2V @ 250?A
    Gate-Charge-Qg-Max-Vgs 190nC @ 10V
    Vgs-Max ±20V
    Input-Capacitance-Ciss-Max-Vds 5000pF @ 25V
    FET-Feature -
    Power-Dissipation-Max 300W (Tc)
    Rds-On-Max-Id-Vgs 4.7 mOhm @ 80A, 10V
    Operating-Temperature -55°C ~ 175°C (TJ)
    Mounting-Type Surface Mount
    Supplier-Device-Package PG-TO263-3-2
    Package-Case TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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    Shipping option:
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Additional Information
  • Datasheet: Download IPB80N06S2L-H5
  • Chipdatas Part: CD93-IPB80N06S2L-H5
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 08:31 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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