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Si1022R-T1-GE3 - Brand New ROHM Field Effect Tube (MOSFET) - Datasheet - Chipdatas

Si1022R-T1-GE3 - Brand New ROHM Field Effect Tube (MOSFET)

In Stock:9600 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 9600, Ready for Immediate Shipping
Marke:ROHM
Chipdatas Teilenummer:CD88-Si1022R-T1-GE3
Hersteller-Teile-Nr.:Si1022R-T1-GE3
Datumscode:09+
Paket:SC-75A
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  • Description

    The Si1022R-T1-GE3 is a field effect tube, also known as a MOSFET. It is an electronic component that can switch and amplify electronic signals. The Si1022R-T1-GE3 is designed for high-speed switching applications, making it ideal for use in power management circuits and voltage regulation circuits. It operates at a voltage range of 20V to 100V and can handle a continuous current of up to 17A.

    Specifications and features

    • Product Category: Field Effect Tube (MOSFET)
    • Manufacturer: Vishay
    • Part number: Si1022R-T1-GE3
    • Voltage Range: 20V to 100V
    • Current Rating: 17A
    • Package/Case: SMD-220
    • Mounting Style: SMD/SMT

    Application Scenarios

    The Si1022R-T1-GE3 is commonly used in power management circuits, such as voltage regulators and DC-DC converters. Its high-speed switching capability makes it ideal for circuits that need to switch large amounts of power quickly.

    Comparison

    Advantages
    • High-speed switching capability
    • Can handle a continuous current of up to 17A
    • Built-in protection features such as thermal shut down and over-current protection
    Disadvantages
    • Not suitable for low voltage applications
    • Can be more expensive than other types of electronic components
    • Requires careful handling to avoid damage during installation
  • ähnliche Teile: 25937 , Klicke zum Zeigen
    Attribute Parameterwert
    Kategorie Field Effect Tube (MOSFET)
    Manufacturer ROHM
    Product Category FETs - Single
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SI1022R-GE3
    Mounting-Style SMD/SMT
    Tradename TrenchFET
    Package-Case SC-75A
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package SC-75A
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 250mW
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 60V
    Input Capacitance 30pF @ 25V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 330mA (Ta)
    Rds-On-Max-Id-Vgs 1.25 Ohm @ 500mA, 10V
    Vgs-th-Max-Id 2.5V @ 250μA
    Gate-Charge-Qg-Vgs 0.6nC @ 4.5V
    Pd-Power-Dissipation 250 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 330 mA
    Vds-Drain-Source-Breakdown-Voltage 60 V
    Rds-On-Drain-Source-Resistance 1.25 Ohms
    Transistor-Polarity N-Channel
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
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    • - EMS: 10-15 business days
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Weitere Informationen
  • Datasheet: Download Si1022R-T1-GE3
  • Chipdaten Teil: CD88-Si1022R-T1-GE3
  • Lagerhaus: China, Hongkong
  • Versenden: Innerhalb von 24 Stunden
  • Kostenloser Versand: Yes
  • Bevorzugter Versand: Yes, 3-5 days
  • Letzte Aktualisierung: 2024/06/03 06:21 +0800
Refund
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    • Vollständige oder teilweise Rückerstattung, wenn der Artikel nicht der Beschreibung entspricht
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