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IXFH6N100 - Brand New IXYS Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IXFH6N100 - Brand New IXYS Field Effect Tube (MOSFET)

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In Stock: 1, Ready for Immediate Shipping
Brand:IXYS
Chipdatas Part No.:CD93-IXFH6N100
Manufacturer Part No.:IXFH6N100
Datecode:09+
Package:TO-247-3
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  • Description

    The IXFH6N100 is an electronic component model categorized as a Field Effect Tube (MOSFET). It belongs to the hIPerFET family of Power MOSFETs, which are designed to provide superior dv/dt performance in power switching applications. This component eliminates the need for discrete, fast recovery "free wheeling" rectifiers.

    Specifications and features

    - Model: IXFH6N100

    - Product Category: Field Effect Tube (MOSFET)

    - Family: hIPerFET

    - Designed for superior dv/dt performance

    - Eliminates the need for discrete, fast recovery "free wheeling" rectifiers

    Application Scenarios

    - Power switching applications

    - Electronics projects requiring MOSFET components

    Comparison

    Advantages

    - Superior dv/dt performance

    - Eliminates the need for discrete, fast recovery rectifiers

    Disadvantages

    - Not suitable for non-power switching applications

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer IXYS
    Product Category FETs - Single
    Series HiPerFET™
    Packaging Tube
    Unit-Weight 0.229281 oz
    Mounting-Style Through Hole
    Tradename HyperFET
    Package-Case TO-247-3
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Number-of-Channels 1 Channel
    Supplier-Device-Package TO-247AD (IXFH)
    Configuration Single
    FET-Type MOSFET N-Channel, Metal Oxide
    Power-Max 180W
    Transistor-Type 1 N-Channel
    VDSS – Drain-Source Voltage 1000V (1kV)
    Input Capacitance 2600pF @ 25V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 6A (Tc)
    Rds-On-Max-Id-Vgs 2 Ohm @ 500mA, 10V
    Vgs-th-Max-Id 4.5V @ 2.5mA
    Gate-Charge-Qg-Vgs 130nC @ 10V
    Pd-Power-Dissipation 180 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 60 ns
    Rise-Time 40 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 6 A
    Vds-Drain-Source-Breakdown-Voltage 1000 V
    Rds-On-Drain-Source-Resistance 2 Ohms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 100 ns
    Turn-On Delay Time 35 ns
    Transconductance 6 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download IXFH6N100
  • Chipdatas Part: CD93-IXFH6N100
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 18:07 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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