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IRFR9120TRPBF - Brand New ROHM Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IRFR9120TRPBF - Brand New ROHM Field Effect Tube (MOSFET)

In Stock:4349 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 4349, Ready for Immediate Shipping
Brand:ROHM
Chipdatas Part No.:CD94-IRFR9120TRPBF
Manufacturer Part No.:IRFR9120TRPBF
Datecode:09+
Package:TO-252-3, DPak 2 Leads + Tab, SC-63
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  • Description

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

    Specifications and features

    • Dynamic dV/dt Rating
    • Repetitive Avalanche Rated
    • Surface Mount (IRFR9120/SiHFR9120)
    • Straight Lead (IRFU9120/SiHFU9120)
    • Available in Tape and Reel
    • P-Channel
    • Fast Switching
    • Lead (Pb)-free Available

    Application Scenarios

    None

    Comparison

    None
    Advantages
    None
    Disadvantages
    None
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer ROHM
    Product Category FETs - Single
    Series -
    Packaging Alternate Packaging
    Unit-Weight 0.050717 oz
    Mounting-Style SMD/SMT
    Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package D-Pak
    Configuration Single
    FET-Type MOSFET P-Channel, Metal Oxide
    Power-Max 2.5W
    Transistor-Type 1 P-Channel
    VDSS – Drain-Source Voltage 100V
    Input Capacitance 390pF @ 25V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 5.6A (Tc)
    Rds-On-Max-Id-Vgs 600 mOhm @ 3.4A, 10V
    Vgs-th-Max-Id 4V @ 250μA
    Gate-Charge-Qg-Vgs 18nC @ 10V
    Pd-Power-Dissipation 2.5 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 25 ns
    Rise-Time 29 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 5.6 A
    Vds-Drain-Source-Breakdown-Voltage - 100 V
    Rds-On-Drain-Source-Resistance 600 mOhms
    Transistor-Polarity P-Channel
    Typical-Turn-Off-Delay-Time 21 ns
    Turn-On Delay Time 9.5 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download IRFR9120TRPBF
  • Chipdatas Part: CD94-IRFR9120TRPBF
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 10:11 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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