Description

The M29W640FB70ZA6E is a non-volatile memory with a capacity of 64 Mb, organized as 8 Mb x8 or 4 Mb x16, designed for reading, erasing, and reprogramming with a single low voltage power supply (2.7 to 3.6V). The memory consists of blocks that can be erased independently to preserve valid data. It can be protected in units of 256 KB to prevent accidental program or erase commands from modifying memory. Commands are written to its interface, which is consistent with JEDEC standards. The memory also has an on-chip program/erase controller that takes care of all the special processes involved in updating memory contents.

Specifications and features

• Supply Voltage: VCC = 2.7V to 3.6V for Program, Erase, Read; VPP =12 V for Fast Program (optional)
• Asynchronous Random/Page Read: Page Width 4 Words; Page Access 25ns; Random Access: 60ns, 70ns
• Programing Time: 10 µs per Byte/Word typical; 4 Words/8 Bytes Program
• 135 memory blocks: 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location), 127 Main Blocks, 64 KBytes each
• Program/Erase Controller: Embedded Byte/Word Program algorithms
• Program/Erase Suspend and Resume: Read from any Block during Program Suspend; Read and Program another Block during Erase Suspend
• Unlock Bypass Program command: Faster Production/Batch Programming
• VPP/WP pin for Fast Program and Write Protect
• Temporary Block Unprotection mode
• Common Flash Interface: 64-bit Security Code
• Extended Memory Block: Extra block used as security block or to store additional information
• Low power consumption: Standby and Automatic Standby
• 100,000 Program/Erase cycles per block

Application Scenarios

The M29W640FB70ZA6E can be used in electronic devices that require non-volatile memory, such as computers, printers, and mobile devices. Its unique features make it suitable for applications that require protection from accidental program or erase commands while preserving valid data.

Comparison

• Non-volatile memory
• Capability to protect memory in units of 256 KB to prevent accidental program or erase commands from modifying memory
• On-chip program/erase controller that simplifies programming or erasing processes
• Supply voltage range of 2.7 to 3.6V
• Program and erase commands are consistent with JEDEC standards
• Low power consumption
• Extended memory block used as a security block or to store additional information
• Capable of 100,000 program/erase cycles per block

• Requires a VPP power supply of 12V for fast programming (optional)